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In most cases, the kinetics are determined by the light intensity, and quantum efficiencies close to one are obtained . At relatively high etching rates or in the intermediate pH range, the removal of photo-oxidation products may become rate-determining, but as the resulting etched structures have generally poor morphologies, photoetching in this kinetic regime has no practical applications. , ref. ). This model also explains the large discrepancies in the photoetching rates that are often observed between different experiments; these rates are indeed dependent on experimental parameters, such as the ratio of dark to illuminated surface area, coverage or exposure of the rear surface, etc.
1-i LiCl. @) The limiting anodic excitation current density i, as a function of a square root of the hole injection current density i, measured at an n-GaAs/Ce4+ electrode in different aqueous electrolytes. 01 mol . 1-1 Ce(SO,), + 2 mol . 1-1 H,SO,. 025 mol . 5 mol . 1-* LiCl. 025 mol . 5 mol 1-' LiCl. (From ref. (64), by permission of Elsevier Sequoia). + + - 24 W. P. Comes and H. H. Goossens which include the chemical reaction step (46) or (46'), Vanmaekelbergh et al.  have considered two cases, in which this step is either reversible (R) or irreversible (I).
19. Interference photomicrograph of the (111) p-GaP surface after etching for 30 min. 5 mA . in aqueous KOH (pH = 13). (From ref. ). , Fig. 20). In this region of the i- V curve, recombination of the photogenerated charge carriers Fig. 20. Interference photomicrograph of the (111) n-GaP surface after etching during 10 min. 3 mA . in aqueous KOH (pH = 13); full light intensity. (From ref. ). 44 W. P. Gomes and H. H. Goossens predominates. As dislocations and damaged sites locally enhance the recombination rate, the local surface concentration of holes will be lower than that of the surroundings, resulting in the formation of etch hillocks.