Download Applied Physics of Carbon Nanotubes: Fundamentals of Theory, by Slava V. Rotkin, Shekhar Subramoney PDF

By Slava V. Rotkin, Shekhar Subramoney

ISBN-10: 3540231102

ISBN-13: 9783540231103

The e-book describes the cutting-edge in primary, utilized and machine physics of nanotubes, together with fabrication, manipulation and characterization for gadget purposes; optics of nanotubes; delivery and electromechanical units and basics of idea for functions. this data is important to the sector of nanoscience when you consider that nanotubes have the capability to develop into a really major digital fabric for many years to return. The e-book will profit all all readers attracted to the applying of nanotubes, both of their theoretical foundations or in newly built characterization instruments which can allow functional machine fabrication.

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Extra resources for Applied Physics of Carbon Nanotubes: Fundamentals of Theory, Optics and Transport Devices

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4. Phaedon Avouris, Marko Radosavljevi´c and Shalom J. Wind: “Carbon Nanotube Electronics and Optoelectronics”, Chapter 9, in this volume. 5. R. Bruce Weisman: “Fluorescence Spectroscopy of Single-Walled Carbon Nanotubes”, Chapter 8, in this volume. 6. Anand Jagota, Bruce A. Diner, Salah Boussaad, and Ming Zheng: “Carbon Nanotube – Biomolecule Interactions: Applications in Carbon Nanotube Separation and Biosensing”, Chapter 10, in this volume. 7. S. L. W. A. Heller and S. Baik: “The Selective Chemistry of Single Walled Carbon Nanotubes”, Chapter 6, in this volume.

Here we study an extra component of the polarization which is due to the induced charge density. Thus, we need to consider only transitions from the levels above the charge neutrality level, E = 0, and below the Fermi level, E = EF (the shaded area in Fig. 4). Hence, the dipole polarization is proportional to the net charge density σ, and the dipole charge density of the armchair SWNT is given by the following expression: √ 2 3CQ (2πRσA )2 R 2h 2 δσ1 = . 35) log ∝ Ext e h R 32π We single out the term 2πRσA , which is the specific one–dimensional charge density of the SWNT, ρ, proportional to the external potential and thus to the external field, Ext .

Subbands of orbital quantization m = 0, 1 . . 9 are shown from top to bottom in an conduction band (from bottom to top in the valence band). The two closest massless subbands, A and B, have the same m = 10. The upper right inset shows a zoom view of the Fermi point with the opening of a gap in the M–SWNT due to perturbation as described in the text. The lower left inset shows how the gap grows linearly with applied potential. The upper left inset shows IVC for METFET with gate width 15 nm long–range potential [57,58].

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